کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1668755 1008874 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The characteristics of fluorinated polycrystalline silicon oxides and thin film transistors by CF4 plasma treatment
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
The characteristics of fluorinated polycrystalline silicon oxides and thin film transistors by CF4 plasma treatment
چکیده انگلیسی
This study describes a simple fluorinating technique by the tetrafluoromethane (CF4) plasma treatment to form fluorinated polyoxides and polycrystalline silicon thin film transistors (TFTs). In comparison with the non-fluorinated device, the fluorinated polyoxides and devices exhibit a higher breakdown field (>8 MV/cm), low charge trapping rates, low off-state current, and low trap states. Furthermore, the performance and reliability of the fluorinated devices are also improved by the CF4 plasma treatment. This is due to the fact that the incorporated fluorine can break strain bonds to form stronger silicon-fluorine (Si-F) bonds to passivate the generation of interface and trap states existing near the polyoxide/polysilicon interface and grain boundaries.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 2, 1 November 2010, Pages 919-922
نویسندگان
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