Physical properties of transparent conducting Cd-Te-In-O thin films

Cd-Te-In-O thin films are grown by pulsed laser deposition using a composite target of CdTe powder embedded in an indium matrix. Oxygen pressures range from 2.00 to 6.67 Pa at a substrate temperature of 420 °C. The structure, optical transmission and sheet resistance of the films are measured. Substitutional compounds with In2 − 2x(Cd,Te)2xO3 stoichiometry are found at high oxygen pressures. A ternary phase diagram of the CdO-In2O3-TeO2 system shows the relationship between the structure and the stoichiometry of the films. To evaluate film performance, a figure of merit is proposed based on the relationship between the integral photonic flux and the sheet resistance. The best figure of merit values corresponds to a sample prepared at 3.8 Pa O2 that consists of (In2O3)0.3(CdTe2O5)0.7 and exhibits an optical band gap of 3.0 eV. This sample is a suitable substrate for electrodeposition due to its good electrochemical stability.