کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668911 | 1008876 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atomic Vapor Depositions of Ti–Ta–O thin films for Metal–Insulator–Metal applications
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
Atomic Vapor Deposition technique was applied for the depositions of Ti–Ta–O oxide films for Metal–Insulator–Metal capacitors used in back-end of line for Radio Frequency applications. Composition, crystallinity, thermal stability and electrical properties were studied. Ti–Ta–O films, with the ratio of Ta/Ti ~ 1.5, deposited at 400 °C on TiN electrodes, were amorphous and possessed a dielectric constant of 50 with low voltage linearity coefficients and leakage currents densities as low as 10− 7 A/cm2 at 1 V. The films, deposited on Si wafers, were amorphous up to the annealing temperature of 700 °C and crystallized in orthorhombic Ta2O5 phase at higher temperatures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 11, 31 March 2011, Pages 3831–3834
Journal: Thin Solid Films - Volume 519, Issue 11, 31 March 2011, Pages 3831–3834
نویسندگان
M. Lukosius, C. Baristiran Kaynak, Ch. Wenger, G. Ruhl, S. Rushworth, P. Baumann,