کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1669165 1008879 2010 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of boron-doped diamond-like carbon prepared by radio frequency sputtering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Characterization of boron-doped diamond-like carbon prepared by radio frequency sputtering
چکیده انگلیسی

Instead of the sophisticated deposition processes and boron sources reported in literature, the study used the radio frequency magnetron sputtering method to prepare boron-doped diamond-like carbon (DLC) films with p-type conduction. The adopted sputtering targets were composed of boron pellets buried in a graphite disc. The undoped DLC films prepared exhibited n-type conduction, based on the Hall-effect measurement. For boron content ≥ 2.51 at.%, the films showed semiconductor behavior converted from n-type to p-type conduction after annealing at 450 °C. B-DLC films with a boron content of 5.91 at.% showed a maximum carrier concentration of 1.2 × 1019 cm−3, a mobility of 0.4 cm2/V s, and an electrical resistivity of 1.8 Ω cm. The results of XPS and Raman spectra indicated that the motion of boron atoms was thermally activated during post-annealing, helping promote the formation of C–B bonds in the films. Moreover, the doping of boron in DLC films decreased sp3 bonding and facilitated carbon atoms to form sp2 bonding and graphitization.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 1, 29 October 2010, Pages 521–526
نویسندگان
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