Effects of annealing process and Mn substitution on structure and ferroelectric properties of BiFeO3 films

The BiFe1 − xMnxO3 (BFMO) (x = 0.03, 0.05 and 0.07) thin films were deposited on indium tin oxide/glass substrates using a metal organic decomposition method. X-ray diffraction analysis reveals that the structure of BiFeO3 films is distorted somewhat by Mn substitution. The leakage measurements indicate that Mn doping content is a dominant factor affecting the leakage current of BFMO films. Due to the poor crystallinity, a small remanent polarization (Pr) is observed in the BFMOx = 0.05 thin film annealed using the conventional method. The Pr values for the sequential-layer annealed BFMO films are found to be related to the intensity of (012) peak and the content of defect complexes between the oxygen vacancies and acceptors.