کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1669194 1008880 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of air annealing on the optical, electrical, and structural properties of indium-tin oxide thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Effects of air annealing on the optical, electrical, and structural properties of indium-tin oxide thin films
چکیده انگلیسی

The effects of air annealing on the optical, electrical, and structural properties of indium-tin oxide thin films were investigated using spectroscopic ellipsometry in the UV–visible range, reflectance–transmittance spectra at normal incidence in the infrared range, electrical resistivity measurements, and X-ray diffraction. It was found that annealing at 300 °C produces an overall shift to lower photon energies of the optical constant spectra, which is related to the increase in electrical resistivity. The electrical measurements performed in the 25–300 K range show a metallic behavior with large residual resistivity, quantity that increases with annealing temperature and is closely related with the change in the relative intensity of the main diffraction peaks. Also it is shown that under certain conditions of film deposition onto indium-tin oxide, some of its properties can change in a similar way as in air-annealing processing.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 16, 30 June 2009, Pages 4615–4620
نویسندگان
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