کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669210 | 1008880 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Medium-term thermal stability of amorphous Ge2Sb2Te5 flash-evaporated thin films with regards to change in structure and optical properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The stability of flash-evaporated amorphous Ge2Sb2Te5 thin films has been studied under medium-term temperature treatment (30 - 80 °C, with a step of 10 °C) in ten subsequent heating and cooling cycles. The significant changes in structure and optical properties are reported. The temperature cycling of the films resulted in formation of an isolated 5 - 7 nm nano-crystalline phase in the amorphous phase. The corresponding increase in refractive index and change in optical bandgap energy and sheet resistance are also presented. The formation of Ge2Sb2Te5 nano-crystals (~ 5 - 7 nm) even under temperature below 80 °C could contribute to the explanation of mechanism of resistivity fluctuation (drift) of the “amorphous phase” films. We also show that the optical and electrical properties of flash evaporated Ge2Sb2Te5 thin films are very similar to those reported for sputtered films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 16, 30 June 2009, Pages 4694-4697
Journal: Thin Solid Films - Volume 517, Issue 16, 30 June 2009, Pages 4694-4697
نویسندگان
T. Wagner, J. Orava, J. Prikryl, T. Kohoutek, M. Bartos, M. Frumar,