Electrode effect on resistive switching of Ti-added amorphous SiOx films

Ti-added amorphous SiOx films were sputter-deposited into stacks of Pt/SiOx/Pt and Cu/SiOx/Pt. Optimally prepared Pt/SiOx/Pt exhibits unipolar resistive switching over 102 cycles, resistance ratio ∼ 103, yet wide voltage distribution (2 ∼ 7 V for SET, 0.5 ∼ 1.5 V for RESET). Cu/SiOx/Pt exhibit similar endurance, resistance ratio up to 107, and SET and RESET voltages reduced to 1.8 ∼ 4.2 V and 0.5 ∼ 1 V, respectively. Cu diffusion into SiOx at the virgin state may play a role in resistive switching of Cu/SiOx/Pt stack besides of filament conduction. Ti-added amorphous SiOx films incorporating Cu electrode shows potential for resistive memory.