کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669330 | 1008882 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of the selective-growth ZnO nanorods with a hole-array pattern on a p-type GaN:Mg layer through a chemical bath deposition process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication of the selective-growth ZnO nanorods with a hole-array pattern on a p-type GaN:Mg layer through a chemical bath deposition process Fabrication of the selective-growth ZnO nanorods with a hole-array pattern on a p-type GaN:Mg layer through a chemical bath deposition process](/preview/png/1669330.png)
چکیده انگلیسی
ZnO nanorod arrays were effectively selective-grown on a p-type GaN:Mg layer through chemical bath deposition (CBD) at a low temperature hydrothermal synthesis (85 °C) with a ZnO seed layer. The 5 μm-diameter hole-array patterns of the ZnO seed layer were grown on a p-type GaN:Mg layer in aqueous solution with a mercury lamp illumination. The diameter and the height of ZnO nanorods were measured as the values of 500 nm and 3 μm, respectively. The growth orientation, surface morphology, and aspect ratio of the ZnO nanorods can be controlled and formed on the hole-array patterned ZnO seed layer. The peak wavelength of the photoluminescence spectrum was measured at 384 nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 24, 1 October 2010, Pages 7398–7402
Journal: Thin Solid Films - Volume 518, Issue 24, 1 October 2010, Pages 7398–7402
نویسندگان
Ming-Shiou Lin, Chi-Chi Chen, Wei-Cheng Wang, Chia-Feng Lin, Shou-Yi Chang,