کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1669347 1008882 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
X-ray absorption and Raman study of GaN films grown on different substrates by different techniques
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
X-ray absorption and Raman study of GaN films grown on different substrates by different techniques
چکیده انگلیسی

Raman scattering and polarization-dependent synchrotron radiation X-ray absorption, in combination, have been employed to examine the residual stress of undoped GaN epitaxial layers grown on Si by molecular beam epitaxy and Si-doped n-type GaN layers grown on sapphire by metalorganic chemical vapor deposition. Values of the lattice constant of different GaN films can be deduced from the interatomic distances in the second coordination shell around Ga by polarization-dependent extended X-ray absorption fine structure analysis and the strain of the films can be obtained. This result is further confirmed by Raman scattering spectra in which the phonon modes show a significant shift between different GaN epitaxial layers with different growth conditions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 24, 1 October 2010, Pages 7475–7479
نویسندگان
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