کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669386 | 1008883 | 2010 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Crystallization of amorphous Si thin films by the reaction of MoO3/Al nanoengineered thermite Crystallization of amorphous Si thin films by the reaction of MoO3/Al nanoengineered thermite](/preview/png/1669386.png)
In this work, we investigated a new crystallization method for amorphous silicon (a-Si) using a mixture of nano-energetic materials: molybdenum oxide and aluminum (MoO3/Al). The purpose of using nano-energetic materials is to improve the performance of a-Si films with a self-propagating exothermic reaction over a period of microseconds without any substrate damage. The mixture of MoO3/Al nanopowders was used for a thermite reaction for crystallization of a-Si thin films.Characterization results showed that a-Si thin films were successfully crystallized to poly-Si as evidenced by a Raman peak near 519 cm− 1. The crystalline volume fraction of poly-Si after the nanoengineered thermite reaction was about 94.7% and poly-Si grains was uniformly distributed with an average grain size of around 40–50 nm. These results indicate that high quality poly-Si thin films were successfully prepared on the substrate.
Journal: Thin Solid Films - Volume 518, Issue 22, 1 September 2010, Pages 6205–6209