کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669503 | 1008884 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural properties of microcrystalline Si films prepared by hot-wire/catalytic chemical vapor deposition under conditions close to the transition from amorphous to microcrystalline growth
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The structural properties of microcrystalline Si films prepared by hot-wire/catalytic chemical vapor deposition, with various dilution ratios of silane in hydrogen, were investigated as regards to the role of hydrogen. A large surface roughness correlated with a low crystalline nuclei density was observed for microcrystalline Si films deposited near the transition from amorphous to microcrystalline growth. Investigations of hydrogen-related properties suggest the presence of molecular hydrogen in these films. We tentatively propose that the diffusion of atomic hydrogen into the subsurface layer of growing films, which leads to the relaxation of amorphous Si network and to the generation of molecular hydrogen, plays an important role for determining the film properties, besides top surface reactions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 14, 2 May 2011, Pages 4502-4505
Journal: Thin Solid Films - Volume 519, Issue 14, 2 May 2011, Pages 4502-4505
نویسندگان
Chisato Niikura, Pere Roca i Cabarrocas, Jean-Eric Bourée,