Direct synthesis of CuIn(Sex, S1 − x)2 films from elemental In, Cu, Se, S particle precursor films and its dependence on energy

CuIn(Sex, S1 − x)2 films were prepared by means of non-vacuum, instantaneous, direct synthesis from elemental In, Cu, Se and S particle precursor films by passing an electrical current with precise control through the metal substrate. For a constant reaction period of 1 s, unreacted elemental particles remained in the films for powers below 1 kV A, whereas the reaction to CuIn(Sex, S1 − x)2 (x = 1) appeared to be complete at higher power. Chalcopyrite structure was observed in the range from 1.08 kV A to 1.24 kV A, the sphalerite structure appeared over 1.35 kV A. X-ray diffraction shows single (112) peaks of CuIn(Sex, S1 − x)2 and the peak position agreed with the nominal composition of the precursors.