کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670121 | 1008896 | 2008 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Epitaxial growth of Al–Cr–N thin films on MgO(111) Epitaxial growth of Al–Cr–N thin films on MgO(111)](/preview/png/1670121.png)
Cubic rock salt structure Al0.60Cr0.40N and Al0.68Cr0.32N films of different thicknesses were grown epitaxially onto MgO(111) substrates by reactive unbalanced magnetron sputtering at 500 °C. Rutherford backscattering spectroscopy reveals stoichiometric nitrides with Al/Cr ratios close to the ones of the used compound targets of 60/40 and 70/30. High resolution X-ray diffraction proves epitaxial growth over the whole film thickness up to thicknesses of ∼ 1.8 μm. Reciprocal space maps and selected area electron diffraction show that the AlxCr1−xN films grow fully relaxed. Scanning and transmission electron microscopy imaging reveals columnar microstructures with column widths between 12–16 nm and {001} surface faceting on individual columns. The fully relaxed growth and the columnar structure can be attributed to limited ad-atom mobility on the initial AlxCr1−xN(111) growth surface.
Journal: Thin Solid Films - Volume 517, Issue 2, 28 November 2008, Pages 598–602