کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670144 | 1008896 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical and structural properties of Ge films from ion-assisted deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Optical and structural properties of Ge films from ion-assisted deposition Optical and structural properties of Ge films from ion-assisted deposition](/preview/png/1670144.png)
چکیده انگلیسی
The optical properties and microstructure of germanium (Ge) films, prepared by ion-assisted deposition (IAD) process, were investigated. The Ge films were deposited on sapphire and silicon substrates, with and without simultaneous Ar+ bombardment. Higher index films, with a refractive index 7.7% larger than that of the single crystalline Ge wafer, were obtained with the IAD process. The density of the IAD film could be 1.5% greater than that of the e-beam film. The results of the heat treatment indicated that the optical and structural properties of the IAD films were more stable. Ge nano-crystallites could be observed under high ion power density, which induced a crystalline structure in the Ge thin films. The average size of the nano-crystallites, as determined from both the X-ray diffraction data and the transmission electron microscopy images, showed that no systematic change had occurred. The results presented in this work suggest that the optical and structural properties of Ge thin films can be effectively modified by the application of the IAD process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 2, 28 November 2008, Pages 704-708
Journal: Thin Solid Films - Volume 517, Issue 2, 28 November 2008, Pages 704-708
نویسندگان
Shih-Liang Ku, Cheng-Chung Lee, Jin-Sheng Tsai,