کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670217 | 1008897 | 2010 | 5 صفحه PDF | دانلود رایگان |

Using an 84% relaxed Ge(100) buffer layer formed on Si(100) by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD), influence of strain upon electrical characteristics of B-doped Si film epitaxially grown on the Ge buffer have been investigated. For the thinner B-doped Si film, surface strain amount is larger than that of the thicker film, for example, strain amount reaches 2.0% for the thickness of 2.2 nm. It is found that the hole mobility is enhanced by the introduction of strain to Si, and the maximum enhancement of about 3 is obtained. This value is higher than that of the usually reported mobility enhancement by strain using Si1 − xGex buffer. Therefore, introduction of strain using relaxed Ge film formed by ECR plasma enhanced CVD is useful to improve future Si-based device performance.
Journal: Thin Solid Films - Volume 518, Issue 6, Supplement 1, 1 January 2010, Pages S57–S61