کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1670317 | 1008898 | 2010 | 4 صفحه PDF | دانلود رایگان |
The structural, electrical and optical properties of Nb-doped ZnO films were investigated with different Nb contents (0, 0.15, 0.31, 0.46, 0.62, and 0.94 at.%) in this article. The film with 0.46 at.% Nb content showed the lowest resistivity of 8.95 × 10− 4 Ω cm and high transmittance about 80% with high c-axis orientation. The undoped ZnO film showed a semiconducting behavior. And Nb-doped ZnO films showed a metal-semiconductor transition (MST), which was connected with localization of degenerate electrons. The films showed metallic conductivity at temperatures closer to the ambient temperature and semiconducting behavior at lower temperatures. It was noted that the NZO films with much lower Nb concentration of 0.15 at.% presented MST compared with other transparent conducting oxides films.
Journal: Thin Solid Films - Volume 518, Issue 18, 1 July 2010, Pages 5288–5291