کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670323 | 1008898 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved properties of Pt–HfO2 gate insulator–ZnO semiconductor thin film structure by annealing of ZnO layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Metal-insulator-semiconductor capacitors were fabricated with sputtered ZnO and atomic layer deposited HfO2 as the semiconductor and gate dielectric layers, respectively. From the capacitance–voltage measurements, it was confirmed that pre-deposition annealing of the sputtered ZnO layer at 300 °C in air greatly decreased the interfacial trap density (∼ 2 × 1012 cm− 2 eV− 1). X-ray photoelectron spectroscopy showed a decrease in the OH bonds adsorbed on the ZnO surface after pre-deposition annealing, which improved the interface property. A very small capacitance equivalent thickness of 1.3 nm was achieved, which decreased the operation voltage (< 5 V) of the device significantly.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 18, 1 July 2010, Pages 5326–5330
Journal: Thin Solid Films - Volume 518, Issue 18, 1 July 2010, Pages 5326–5330
نویسندگان
Kwang Duk Na, Jeong Hwan Kim, Tae Joo Park, Jaewon Song, Cheol Seong Hwang, Jung-Hae Choi,