کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1670436 1008900 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electroless deposition of bismuth on Si(111) wafer from hydrogen fluoride solutions
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Electroless deposition of bismuth on Si(111) wafer from hydrogen fluoride solutions
چکیده انگلیسی

Thin Bi layers were deposited by simple immersion of silicon chip into diluted HF aqueous solution, containing bismuth(III) ions. Bi nanoparticles or continuous up to 300 nm thick Bi film can be grown on silicon by the variation of the temperature and deposition time. Prepared surfaces have been characterized by atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Raman scattering, photoluminescence and resistivity measurement methods. It was found that thinner Bi layers have a yellowish colour.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 14, 3 May 2010, Pages 3690–3693
نویسندگان
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