کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670448 | 1008900 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ellipsometric studies of N+ implanted Ti thin films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
Spectroscopic ellipsometry was employed to study the optical response of N+ irradiated titanium thin films synthesized by pulsed laser deposition technique. The ellipsometric parameters were measured in the energy range of 1.5 to 5.5Â eV. A combined Drude Lorentz (DL) model was employed to quantitatively describe the behavior of the dielectric response as a function of N+ irradiation fluence. A modeling based on effective medium approximation (EMA) was carried out to compute the volume fractions of Ti and TiN from the dielectric response functions. The plasma energy as computed from the DL model, decreased with increasing fluence. The results are explained on the basis of formation of TiN phase which was revealed from grazing incidence X-ray diffraction studies. This was further corroborated from the alterations on volume fraction of titanium as inferred from EMA based computation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 14, 3 May 2010, Pages 3754-3758
Journal: Thin Solid Films - Volume 518, Issue 14, 3 May 2010, Pages 3754-3758
نویسندگان
S. Tripura Sundari, R. Krishnan, S. Dash,