کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1670540 1008901 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial Growth
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial Growth
چکیده انگلیسی

This work will focus on the use of Selective Epitaxial Growth (SEG) of Si and SiGe in multi-gate devices. We will demonstrate the necessity of using SEG in the processing of these narrow fin devices. Reductions of the source/drain resistance and Gate Induced Drain Leakage (GIDL) are the main advantages of using SEG. Although the use of SiGe SEG has little impact as mobility booster in narrow fin pMOS devices, it provides a significant reduction in contact resistance.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 1, 3 November 2008, Pages 101–104
نویسندگان
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