کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670587 | 1008901 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strain, composition and crystalline perfection in thin SiGe layers studied by Raman spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Strain, composition and crystalline perfection in thin SiGe layers studied by Raman spectroscopy Strain, composition and crystalline perfection in thin SiGe layers studied by Raman spectroscopy](/preview/png/1670587.png)
چکیده انگلیسی
Micro-Raman spectroscopy has been employed for measurements of Ge content and strain-relaxation of thin (< 100nm) Si1−xGex (0.2 < x < 0.35) epitaxial layers grown by molecular beam epitaxy. The phonon line width of both Raman bands, Si–Si, and Si–Ge, was studied in order to determine the crystalline quality of the SiGe layers. The dependence of Si–Si and SiGe line width on Ge content in samples obtained under a variety of growth conditions was also analysed. For the majority of samples studied in this work the phonon line width of both Si–Si and Si–Ge modes increases with decreasing temperature in the very low-temperature regime.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 1, 3 November 2008, Pages 265–268
Journal: Thin Solid Films - Volume 517, Issue 1, 3 November 2008, Pages 265–268
نویسندگان
T.S. Perova, R.A. Moore, K. Lyutovich, M. Oehme, E. Kasper,