Structural investigations of InZnO films grown by pulsed laser deposition technique

Thin films of indium zinc oxide were grown from targets with In atomic concentration [In/(In + Zn)] of 2.8%, 4.3%, and 16.8%, respectively, by pulsed laser deposition technique (KrF laser, 10 Hz, 4 J/cm2 fluence) on Si(001) and glass substrates that were heated at 500 °C. X-ray diffraction investigations showed that targets that had an atomic In concentration of 2.8% exhibited only the wurtzite-type ZnO lattice, while the targets that contained In concentrations of 4.3% and 16.8% consisted of a mixture of the wurtzite-type ZnO and the homologous compound Zn7In2O10. All deposited films exhibited only the wurtzite-type ZnO lattice, being c-axis textured. The increase of the In concentration resulted in films less textured that also exhibited increased lattice parameters a and c. X-ray photoelectron spectroscopy investigations showed slight changes of the In 3d and Zn 2p binding energies for increased In content, consistent with an In doped ZnO lattice.