Growth of RuO2 thin films by liquid injection atomic layer deposition

We have grown RuO2 films by pulsed liquid injection atomic layer deposition using (Ru(thd)2(cod)) dissolved in pyridine. The deposition process took place at 290 °C and consisted of four steps. The films exhibited smooth surface. Analysis of the films using secondary ion mass spectroscopy (SIMS) revealed low content of carbon in the films. Resistivity of the RuO2 film at room temperature was about 160 µΩ cm.