کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670799 | 1008904 | 2010 | 5 صفحه PDF | دانلود رایگان |

To obtain a suitable sputtering target for depositing transparent conducting Al-doped ZnO (AZO) films by using direct current (DC) magnetron sputtering, this study investigates the possibility of using atmosphere controlled sintering of Al2O3 mixed ZnO powders to prepare highly conductive ceramic AZO targets. Experimental results show that a gas mixture of Ar and CO could produce a sintered target with resistivity in the range of 2.23 × 10− 4 Ω cm. The fairly low resistivity was mainly achieved by the formation of both aluminum substitution (AlZn) and oxygen vacancy (VO), thus greatly increasing the carrier concentration. Compared to usual air sintered target, the thin film deposited by the Ar + CO sintered target exhibited lower film resistivity and more uniform spatial distribution of resistivity. A film resistivity as low as 6.8 × 10− 4 Ω cm was obtained under the sputtering conditions of this study.
Journal: Thin Solid Films - Volume 518, Issue 21, 31 August 2010, Pages 6071–6075