کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1670800 1008904 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
High aspect ratio contact hole etching using relatively transparent amorphous carbon hard mask deposited from propylene
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
High aspect ratio contact hole etching using relatively transparent amorphous carbon hard mask deposited from propylene
چکیده انگلیسی

In this study, a high aspect ratio contact pattern, beyond 70 nm technology, in a very-large-scale integrated circuit, was achieved using hydrogenated amorphous carbon (a-C:H) film as the dry etching hard mask. The effect of temperature on the a-C:H deposits prepared by plasma enhanced chemical vapor deposition was studied. The a-C:H films resulting from propylene (C3H6) decomposition exhibited high transparency incorporated rich hydrogen concentration with a decreasing deposition temperature. A matrix of dispersed cross-linked sp3 clusters in a-C:H films, which has an increasing optical band gap and higher hydrogen content, is attributed to reduce the defect density of status and obtain high transmittance rate. Moreover, the higher transparency of a-C:H films could afford lithographic aligned capability as well as compressive stress and dry etching resistance. These explorations provided insights into the role of hydrogen in a-C film and also into the practicality of its future nano-scale device applications.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 21, 31 August 2010, Pages 6076–6079
نویسندگان
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