کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1670800 | 1008904 | 2010 | 4 صفحه PDF | دانلود رایگان |

In this study, a high aspect ratio contact pattern, beyond 70 nm technology, in a very-large-scale integrated circuit, was achieved using hydrogenated amorphous carbon (a-C:H) film as the dry etching hard mask. The effect of temperature on the a-C:H deposits prepared by plasma enhanced chemical vapor deposition was studied. The a-C:H films resulting from propylene (C3H6) decomposition exhibited high transparency incorporated rich hydrogen concentration with a decreasing deposition temperature. A matrix of dispersed cross-linked sp3 clusters in a-C:H films, which has an increasing optical band gap and higher hydrogen content, is attributed to reduce the defect density of status and obtain high transmittance rate. Moreover, the higher transparency of a-C:H films could afford lithographic aligned capability as well as compressive stress and dry etching resistance. These explorations provided insights into the role of hydrogen in a-C film and also into the practicality of its future nano-scale device applications.
Journal: Thin Solid Films - Volume 518, Issue 21, 31 August 2010, Pages 6076–6079