کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670977 | 1008908 | 2010 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Optical and structural properties of SiOx films from ion-assisted deposition Optical and structural properties of SiOx films from ion-assisted deposition](/preview/png/1670977.png)
This study investigates the optical and structural properties of SiOx (x ∼ 1) films prepared by an ion-assisted deposition (IAD) process. The films were prepared by evaporating silicon monoxide, with and without simultaneous Ar+ bombardment. The stoichiometry of each film was determined as measured by the infrared spectrometry and X-ray photoelectron spectrometry. The variation in the stoichiometry revealed that the oxygen content of the SiOx thin films varied slightly under the different conditions of the Ar+ bombardment. The results of the X-ray diffraction and transmission electron microscopy (TEM) measurements illustrated that all of the films had amorphous structures. However, a different interfacial appearance between the film and the substrate was observed from the TEM image. The optical constants of the SiOx thin films were determined by a spectroscopic ellipsometry. The extinction coefficient of all of the films approached zero in the infrared wavelength range from 2 to 7 μm, but the refractive index was varied by the IAD process. The variation of these refractive indices is mainly related to the packing density of the films.
Journal: Thin Solid Films - Volume 518, Issue 17, 30 June 2010, Pages 4804–4808