کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1670993 1008908 2010 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Intrinsic stress effect on fracture toughness of plasma enhanced chemical vapor deposited SiNx:H films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Intrinsic stress effect on fracture toughness of plasma enhanced chemical vapor deposited SiNx:H films
چکیده انگلیسی
The apparent fracture toughness for a series of plasma enhanced chemical vapor deposition SiNx:H films with intrinsic film stress ranging from 300 MPa tensile to 1 GPa compressive was measured using nanoindentation. The nanoindentation results show the measured fracture toughness for these films can vary from as high as > 8 MPa⋅√m for films in compression to as low as < 0.5 MPa⋅√m for the films in tension. Other film properties such as density, Young's modulus, and hydrogen content were also measured and not observed to correlate as strongly with the measured fracture toughness values. Various theoretical corrections proposed to account for the presence of intrinsic or residual stresses in nanoindent fracture toughness measurements were evaluated and found to severely underestimate the impact of intrinsic stresses at thicknesses ≤ 3 μm. However, regression analysis indicated a simple linear correlation between the apparent fracture toughness and intrinsic film stress. Based on this linear trend, a stress free/intrinsic fracture toughness of 1.8 ± 0.7 MPa⋅√m was determined for the SiNx:H films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 17, 30 June 2010, Pages 4898-4907
نویسندگان
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