Effect of process conditions on the optoelectronic characteristics of ZnO:Mo thin films prepared by pulsed direct current magnetron sputtering

The purpose of this study is to use pulsed magnetron sputtering to deposit transparent conductive ZnO:Mo (MZO) film on a Corning 1737 glass substrate. Various process parameters, including power, work pressure, pulsed frequency, film thickness, and substrate temperature, were analyzed for their effects on the microstructure and optoelectronic characteristics of MZO thin film. Experimental results show that MZO film with a low resistivity of approximately 8.9 × 10− 4 Ω cm and a visible light transitivity of greater than 80% can be obtained using a Mo content of 1.77 wt.%, sputtering power of 100 W, work pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm without heating. The value of optical band gap of MZO increased upon increasing the crystallinity of the MZO thin film, and the range of the optical band gap of MZO thin film is from 3.30 to 3.35 eV.