کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671065 | 1008910 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
DC sputter deposition of amorphous indium–gallium–zinc–oxide (a-IGZO) films with H2O introduction
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: DC sputter deposition of amorphous indium–gallium–zinc–oxide (a-IGZO) films with H2O introduction DC sputter deposition of amorphous indium–gallium–zinc–oxide (a-IGZO) films with H2O introduction](/preview/png/1671065.png)
چکیده انگلیسی
Amorphous indium–gallium–zinc–oxide (a-IGZO) films were deposited by dc magnetron sputtering with H2O introduction and how the H2O partial pressure (PH2O) during the deposition affects the electrical properties of the films was investigated in detail. Resistivity of the a-IGZO films increased dramatically to over 2 × 105 Ωcm with increasing PH2O to 2.7 × 10− 2 Pa while the hydrogen concentration in the films increased to 2.0 × 1021 cm− 3. TFTs using a-IGZO channels deposited under PH2O at 1.6–8.6 × 10− 2 Pa exhibited a field-effect mobility of 1.4–3.0 cm2/Vs, subthreshold swing of 1.0–1.6 V/decade and on–off current ratio of 3.9 × 107–1.0 × 108.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 11, 31 March 2010, Pages 3004–3007
Journal: Thin Solid Films - Volume 518, Issue 11, 31 March 2010, Pages 3004–3007
نویسندگان
Takafumi Aoi, Nobuto Oka, Yasushi Sato, Ryo Hayashi, Hideya Kumomi, Yuzo Shigesato,