کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671066 | 1008910 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic structural analysis of transparent In2O3–ZnO films by hard X-ray photoelectron spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The electronic structural analysis of the conductive transparent films was carried out using bulk sensitive hard X-ray photoelectron spectroscopy (HAXPES). The In2O3–ZnO film has amorphous structure before and after annealed, and the conduction band spectrum around Fermi level showed the similar spectra with that of as-deposited amorphous In2O3 film. In these amorphous films, the conduction band minimum locates at the deeper level than the crystalline In2O3 film. The electronic state which comes from randomness of amorphous structure possibly exists around this level or below. These electrons are expected to act as scattering center. We concluded that the electron mobility depends on the density of this electronic state.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 11, 31 March 2010, Pages 3008–3011
Journal: Thin Solid Films - Volume 518, Issue 11, 31 March 2010, Pages 3008–3011
نویسندگان
Tadao Shibuya, Masahiro Yoshinaka, Yukio Shimane, Futoshi Utsuno, Koki Yano, Kazuyoshi Inoue, Eiji Ikenagab, Jung J. Kim, Shigenori Ueda, Masaaki Obata, Keisuke Kobayashi,