Non-equilibrium charge carriers generation - recombination mechanisms at the interface of the SnO2/GaSe heterojunction

The interface of the SnO2/GaSe heterojunctions, having SnO2 layer obtained by different deposition methods have been studied using the photoluminescence and photocurrent spectral distribution. The SnO2/GaSe structures are photosensitive in the 1.7 ÷ 3.6 eV spectral range and reveal its maximum value for the heterojunctions with magnetron sputtered SnO2 layer.