کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1671589 1008920 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The effect of nitrogen on the properties of zinc nitride thin films and their conversion into p-ZnO:N films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
The effect of nitrogen on the properties of zinc nitride thin films and their conversion into p-ZnO:N films
چکیده انگلیسی

Zinc nitride thin films were deposited by magnetron sputtering using ZnN target in plasma containing either N2 or Ar gases. The rf-power was 100 W and the pressure was 5 mTorr. The properties of the films were examined with thermal treatments up to 550 °C in N2 and O2 environments. Films deposited in Ar plasma were opaque and conductive (ρ ∼ 10− 1 to 10− 2 Ω cm, ND ∼ 1018 to 1020 cm− 3) due to excess of Zn in the structure. After annealing at 400 °C, the films became more stoichiometric, Zn3N2, and transparent, but further annealing up to 550 °C deteriorated the electrical properties. Films deposited in N2 plasma were transparent but very resistive even after annealing. Both types of films were converted into p-type ZnO upon oxidation at 400 °C. All thermally treated zinc nitride films exhibited a shoulder in transmittance at around 345 nm which was more profound for the Ar-deposited films and particularly for the oxidized films. Zinc nitride has been found to be a wide band gap material which makes it a potential candidate for transparent optoelectronic devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 24, 15 October 2007, Pages 8573–8576
نویسندگان
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