Effects of annealing temperature on the resistance switching behavior of CaCu3Ti4O12 films

In this study, a novel material CaCu3Ti4O12 (CCTO), for resistance random access memory application, was prepared by sol–gel method and annealed at various temperatures. The crystallinity and microstructure of CCTO films improve as annealing temperature increases. The CCTO films annealed at 800 °C and above endure more switching cycles (> 1000) and exhibit a small degradation of the resistance ratio between the high resistance state and the low resistance state than those annealed at 700 °C do. The correlation between resistance switching behaviors and film microstructure is discussed.