کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671789 | 1008923 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film](/preview/png/1671789.png)
چکیده انگلیسی
The change of strain in Si0.7Ge0.3 films was investigated with medium energy ion scattering (MEIS). Si was removed in the films by selective oxidation at 800 °C, resulting in the formation of a Ge pile-up layer on the surface. The relaxation and the thickness of the pile-up layer were closely related to the oxidation time. MEIS data demonstrated that relaxation of the Ge layer in the depth direction occurred partially, and that the rates of relaxation decreased with depth. In addition, the rate of relaxation increased with the oxidation time. Lastly, the relaxation of the Ge layer affected the strain of the remaining Si0.7Ge0.3 substrate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 8, 1 February 2010, Pages 2065–2069
Journal: Thin Solid Films - Volume 518, Issue 8, 1 February 2010, Pages 2065–2069
نویسندگان
B.-G. Min, J.-H. Yoo, H.-C. Sohn, D.-H. Ko, M.-H. Cho, K.-B. Chung, T.-W. Lee,