کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671970 | 1008927 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interpretation of the hydrogen evolution during deposition of microcrystalline silicon by chemical transport
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Hydrogen diffusion is a crucial step in film growth by chemical vapor deposition of both hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (µ-Si:H) materials. To gain an insight into the correlation between hydrogen diffusion and the amorphous to microcrystalline transition, we have exposed freshly deposited intrinsic, boron- and phosphorus-doped a-Si:H thin films to hydrogen (or deuterium) plasma in conditions of µc-Si:H deposition by chemical transport. Using both in-situ and ex-situ characterizations techniques, we examined the kinetics of hydrogen excess evolution during the plasma exposure. Solution of the partial differential equation for the diffusion of mobile H atoms with a specific boundary condition that accounts for the reduction of atomic H flux with the growth of the µc-Si:H layer supports the theory that the out-diffusion is a consequence of the growth of the µc-Si:H layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 23, 1 October 2009, Pages 6225-6229
Journal: Thin Solid Films - Volume 517, Issue 23, 1 October 2009, Pages 6225-6229
نویسندگان
N. Pham, A. Hadjadj, P. Roca i Cabarrocas, O. Jbara, F. Kaïl,