کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1672026 1008928 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Epitaxial Bi(111) films on Si(001): Strain state, surface morphology, and defect structure
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Epitaxial Bi(111) films on Si(001): Strain state, surface morphology, and defect structure
چکیده انگلیسی

Smooth and epitaxial thin bismuth (Bi) films with low defect density were grown on Si(001) by molecular beam epitaxy. The film quality is characterized by in situ spot profile analysis low-energy electron diffraction and scanning tunneling microscopy, and ex situ atomic force microscopy and X-ray diffraction. The complete process is accomplished in three steps. Firstly, a template of a strained 6 nm Bi(111) film is grown at 150 K. Secondly, during annealing to 450 K the strain is relieved by the formation of an ordered array of misfit dislocations at the interface. Finally, additional Bi is deposited at 450 K up to the desired thicknesses of the Bi film. The film consists of 90° rotated and twinned μm size crystallites with a terrace size larger than 100 nm and an overall roughness of only 0.6 nm. A 25 nm thick Bi film is relaxed to Bi bulk lattice constant which is confirmed by X-ray diffraction.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 23, 1 October 2008, Pages 8227–8231
نویسندگان
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