کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1672045 1008928 2008 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Aqueous solution–gel preparation of ultrathin ZrO2 films for gate dielectric application
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Aqueous solution–gel preparation of ultrathin ZrO2 films for gate dielectric application
چکیده انگلیسی

Zirconia ultrathin films were deposited by aqueous chemical solution deposition, using citratoperoxo-Zr(IV) precursors with different citric acid content. The precursor synthesis, thermal decomposition and crystallization of oxide powders were studied. This showed an effect of the citric acid content in every stage. The precursors were applied for the deposition of uniform, ultrathin films (< 30 nm thickness) as well. Tetragonal ZrO2 crystallized starting from 500 °C for thin films with a thickness of 10 nm. This was independent of the citric acid content in the precursor. The topography after annealing at 600 °C was also similar. However, annealing at higher temperatures led to coarser grain size. The dielectric constant was high (~ 21–22) and comparable to ZrO2 deposited by atomic layer deposition.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 23, 1 October 2008, Pages 8343–8351
نویسندگان
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