کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1672146 1008929 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Improvements of morphologies and emission characteristics of highly purified organic oligomer semiconductors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Improvements of morphologies and emission characteristics of highly purified organic oligomer semiconductors
چکیده انگلیسی

We have purified oligomer semiconductors through vacuum sublimation and compared the film morphologies and the device performance of the purified materials with those of unpurified ones. We fabricated melt-molding films and thin film organic field-effect transistors (OFETs) using both the purified and unpurified oligomers. Comparing morphologies of the molten films we found regular arrangements of the crystal domains for the purified oligomers. Furthermore, the purified materials show definite light emission from the OFET devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 2, 30 November 2009, Pages 489–492
نویسندگان
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