RuO2 doped SnO2 nanobipyramids on Si (100) as a field emitter

Thin films of RuO2: SnO2 nanobipyramids have been grown on silicon (100) flat substrates, and their field emission behavior has been investigated. The field emission experiments have been performed in parallel plate configuration. In this experiment, the onset field for 0.1 μA/cm2 current density has been found to be 0.2 V/μm. The Fowler–Nordheim plot shows non-linear nature typical that of a semiconductor. The field enhancement factor has been estimated to be 35,600 cm− 1, indicating that the field emission originates from the nanometric features of the emitter. The current stability recorded at a preset value of 1 μA is observed to be good. Our field emission results on RuO2: SnO2 nanobipyramids indicate that, RuO2: SnO2 nanobipyramids are a potential candidate for futuristic field emission based devices.