کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1672511 | 1008934 | 2009 | 6 صفحه PDF | دانلود رایگان |

Ultrathin TiN films were grown by reactive dc magnetron sputtering on thermally oxidized Si (100) substrates. The electrical resistance of the films was monitored in-situ during growth in order to determine the minimum thickness of a continuous film. The coalescence thickness has a minimum of 1 nm at a growth temperature of 400 °C after which it increases with growth temperature. The minimum thickness of a continuous film decreases with increasing growth temperature from 2.9 nm at room temperature to 2.2 nm at 650 °C. In-situ resistivity measurements show that films grown at 500 °C and above are resistant to oxidation indicating high density. X-ray photoelectron spectroscopy and X-ray diffraction measurements show that the TiN grain stoichiometry and grain size increases with increasing growth temperature.
Journal: Thin Solid Films - Volume 517, Issue 24, 30 October 2009, Pages 6731–6736