کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1672677 | 1008938 | 2008 | 8 صفحه PDF | دانلود رایگان |
Substituted Ce1−xNdxO2−δ cerium dioxide thin films are obtained by pulsed laser deposition technique. The films are deposited for various deposition times and at.% Nd, on [100] Si substrates, covered by a thin native SiO2 layer. The evolution of the cell parameters with Nd content shows that a solid solution is formed, up to x = 0.27. The thin films are homogenous in composition at a nanometer scale. The morphology of the grains does not change significantly with Nd content. The microstructure is columnar, with a preferential [100] growth direction. The width of the grains varies from 20 to 30 nm. The conductivities of the thin films are determined from impedance spectroscopy analyses, in the temperature range 200 °C to 600 °C. The experimental data are explained in the frame of the space charge layer model.
Journal: Thin Solid Films - Volume 516, Issue 12, 30 April 2008, Pages 3747–3754