Microstructure and electrical properties of Cu films obtained by chemical vapor deposition of copper(I) pentafluoropropionate complexes with vinyltrialkylsilanes

Copper thin layers were deposited on Si(111) and glass substrates by chemical vapor deposition method using [Cu(OOCC2F5)(L)], L = vinyltrimethylsilane (1), vinyltriethylsilane (2) as precursors. Application of multistage depositions of Cu films on a glass surfaces resulted in formation of the metallic membranes. Fabricated crystalline copper layers, which contains some carbon (5–9%) and oxygen (1–5%) impurities, have been characterized by grazing incidence X-ray diffraction and X-ray photoelectron methods. The morphology studies exhibited metallic layers composed of copper grains, their size and packed density depends on deposition parameters. Electrical properties of metallic films were studied by four-point probe, as a function of temperature in 103–333 K range.