کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1672718 | 1008938 | 2008 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical properties and leakage current behavior of un-doped and Ti-doped lead zirconate thin films synthesized by sol–gel method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical properties and leakage current behavior of un-doped and Ti-doped lead zirconate thin films synthesized by sol–gel method Electrical properties and leakage current behavior of un-doped and Ti-doped lead zirconate thin films synthesized by sol–gel method](/preview/png/1672718.png)
چکیده انگلیسی
Un-doped and Ti-doped (5, 10 and 15 mol%) antiferroelectric and ferroelectric lead zirconate–PbZrO3 (PZ) thin films were prepared by sol–gel spin coating method. All PZ films crystallized in the perovskite phase with full [111] pseudocubic orientation with a uniform microstructure. The paraelectric–ferroelectric phase transition temperature was found to shift to lower values and the electrical properties were found to degrade as a result of decreasing film thickness. The leakage current of the un-doped PZ films were dominated by the space-charge-limited current, whereas Poole–Frenkel conduction mechanism was found to be dominant at the Ti-doped films at high electric fields.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 12, 30 April 2008, Pages 4002–4010
Journal: Thin Solid Films - Volume 516, Issue 12, 30 April 2008, Pages 4002–4010
نویسندگان
Ebru Mensur Alkoy, Tadashi Shiosaki,