کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1672786 1008939 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of cetyltrimethylammonium bromide on redox deposition and rectification properties of silicon oxide thin film
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Effects of cetyltrimethylammonium bromide on redox deposition and rectification properties of silicon oxide thin film
چکیده انگلیسی

Silicon oxide (SiOx) thin film was deposited onto fluorine-doped tin oxide (FTO) and silicon wafer substrate by the reduction of an aqueous solution containing ammonium hexafluorosilicate, dimethylamine borane and cetyltrimethylammonium bromide (CTAB). Characterization of the films by X-ray photoelectron spectroscopic depth profile and infrared spectroscopy proved that the addition of CTAB into the film enhanced the aggregation of silica particles and the growth rate. The SiOx films (resistivity: 3.2 × 108 Ω cm) remarkably improved the rectification properties of FTO/SiOx/poly(3,4-ethylenedioxythiophene) derivative diodes. A rectification mechanism based on conduction of electron and ions was investigated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 11, 2 April 2009, Pages 3230–3234
نویسندگان
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