Structure and electrical properties of (100)-oriented Pb(Zn1/3Nb2/3)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 thin films on La0.7Sr0.3MnO3 electrode by chemical solution deposition

(100)-oriented 0.462Pb(Zn1/3Nb2/3)O3–0.308Pb(Mg1/3Nb2/3)O3–0.23PbTiO3 (PZN-PMN-PT) perovskite ferroelectric thin films were prepared on La0.7Sr0.3MnO3/LaAlO3 (LSMO/LAO) substrate via a chemical solution deposition route. The perovskite LSMO electrode was found to effectively suppress the pyrochlore phase while promote the growth of the perovskite phase in the PZN-PMN-PT film. The film annealed at 700 °C exhibited a high dielectric constant of 2130 at 1 kHz, a remnant polarization, 2Pr, of 29.8 μC/cm2, and a low leakage current density of 7.2 × 10− 7 A/cm2 at an applied field of 200 kV/cm. The ferroelectric polarization was fatigue-free at least up to 1010 cycles. Piezoelectric coefficient, d33, of 48 pm/V was also demonstrated. The results showed that much superior properties could be achieved with the PZN-PMN-PT thin films on the solution derived LSMO electrode than on Pt electrode by sputtering.