Fabrication of p-type fin field-effect-transistors by solid-phase boron diffusion process using thin film doping sources

A simple doping method to fabricate a very thin channel body of the p-type fin field-effect-transistor (FinFET) with a 20-nm gate length by solid-phase-diffusion process is presented. Using the poly-boron-films (PBF) as a diffusion source of boron and the rapid thermal annealing, the p-type source/drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of boron-doped regions were investigated by using the p+–n junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20–100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.