کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673046 | 1518087 | 2007 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Probing into the asymmetric nature of electromigration performance of submicron interconnect via structure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
The void locations of via electromigration failures for multi-level dual damascene copper interconnect structure are highly asymmetric with respect to the current flow direction. In this work, finite element analysis is performed to investigate the nature of the asymmetries, and to identify the likely failure locations in the via structures at different test conditions. By coupling the current density, temperature and the stress fields in the analysis, and using the site with maximum atomic flux divergence as the void location site, a good correlation between the model predictions and experimental observations is obtained.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issues 7–8, 26 February 2007, Pages 3867–3874
Journal: Thin Solid Films - Volume 515, Issues 7–8, 26 February 2007, Pages 3867–3874
نویسندگان
Arijit Roy, Cher Ming Tan,