کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673074 | 1008943 | 2008 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Inductively coupled plasma reactive ion etching of ZnO films in HBr/Ar plasma
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The etching characteristics of ZnO thin films were examined in an HBr/Ar gas mix using an inductively coupled plasma reactive ion etching system. The etch rate and etch profile were systematically investigated as a function of gas concentration. In addition, the effects of etch parameters such as coil rf power, dc-bias voltage, and gas pressure were studied. As the HBr concentration increased, the etch rate of the ZnO films gradually decreased while the etch profile was improved. Surface analyses including X-ray photoelectron spectroscopy and atomic force microscopy were employed to elucidate the etch mechanism of ZnO in an HBr/Ar chemistry.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 11, 1 April 2008, Pages 3521–3529
Journal: Thin Solid Films - Volume 516, Issue 11, 1 April 2008, Pages 3521–3529
نویسندگان
Su Ryun Min, Han Na Cho, Yue Long Li, Chee Won Chung,