Deposition process of Si–B–C ceramics from CH3SiCl3/BCl3/H2 precursor

Si–B–C coatings have been prepared by chemical vapour deposition (CVD) from CH3SiCl3/BCl3/H2 precursor mixtures at low temperature (800–1050 °C) and reduced pressures (2, 5, 12 kPa). The kinetics (including apparent activation energy and reaction orders) related to the deposition process were determined within the regime controlled by chemical reactions. A wide range of coatings, prepared in various CVD conditions, were characterized in terms of morphology (scanning electron microscopy), structure (transmission electron microscopy, Raman spectroscopy) and elemental composition (Auger electron spectroscopy). On the basis of an in-situ gas phase analysis by Fourier transform infrared spectroscopy and in agreement with a previous study on the B–C system, the HBCl2 species was identified as an effective precursor of the boron element. HxSiCl(4−x), SiCl4 and CH4, derived from CH3SiCl3, were also shown to be involved in the homogeneous and the heterogeneous reactions generating silicon and carbon in the coating. A correlation between the various experimental approaches has supported a discussion on the chemical steps involved in the deposition process.